IRF8113TR
detaildesc

IRF8113TR

Infineon Technologies

Product No:

IRF8113TR

Manufacturer:

Infineon Technologies

Package:

8-SO

Datasheet:

pdf

Description:

MOSFET N-CH 30V 17.2A 8SO

Quantity:

Delivery:

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Payment:

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In Stock : 2042

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.294

    $0.294

  • 10

    $0.25725

    $2.5725

  • 50

    $0.2205

    $11.025

  • 100

    $0.202125

    $20.2125

  • 500

    $0.192938

    $96.469

  • 1000

    $0.18375

    $183.75

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2910 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.6mOhm @ 17.2A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package 8-SO
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta)
Series HEXFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17.2A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)