IRFB31N20DPBF
detaildesc

IRFB31N20DPBF

Infineon Technologies

Product No:

IRFB31N20DPBF

Manufacturer:

Infineon Technologies

Package:

TO-220AB

Datasheet:

-

Description:

MOSFET N-CH 200V 31A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 9405

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.828571

    $2.828571

  • 10

    $2.545714

    $25.45714

  • 50

    $2.262857

    $113.14285

  • 100

    $1.98

    $198

  • 500

    $1.923429

    $961.7145

  • 1000

    $1.885714

    $1885.714

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2370 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 82mOhm @ 18A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 5.5V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 3.1W (Ta), 200W (Tc)
Series HEXFET®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube