IRFBE30PBF-BE3
detaildesc

IRFBE30PBF-BE3

Vishay Siliconix

Product No:

IRFBE30PBF-BE3

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Datasheet:

pdf

Description:

MOSFET N-CH 800V 4.1A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 1776

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.165625

    $2.165625

  • 10

    $1.949062

    $19.49062

  • 50

    $1.7325

    $86.625

  • 100

    $1.515937

    $151.5937

  • 500

    $1.472625

    $736.3125

  • 1000

    $1.44375

    $1443.75

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 125W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Package Tube
Base Product Number IRFBE30