IRFD123PBF
Vishay Siliconix
Product No:
IRFD123PBF
Manufacturer:
Package:
4-HVMDIP
Datasheet:
Description:
MOSFET N-CH 100V 1.3A 4DIP
Quantity:
Delivery:
Payment:
In Stock : 1517
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.854438
$0.854438
10
$0.768994
$7.68994
50
$0.68355
$34.1775
100
$0.598106
$59.8106
500
$0.581017
$290.5085
1000
$0.569625
$569.625
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Series | - |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
| Base Product Number | IRFD123 |
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