IXFN50N120SK
detaildesc

IXFN50N120SK

IXYS

Product No:

IXFN50N120SK

Manufacturer:

IXYS

Package:

SOT-227B

Datasheet:

pdf

Description:

SICFET N-CH 1200V 48A SOT227B

Quantity:

Delivery:

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Payment:

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In Stock : 12

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $95.0607

    $95.0607

  • 10

    $85.55463

    $855.5463

  • 50

    $76.04856

    $3802.428

  • 100

    $66.54249

    $6654.249

  • 500

    $64.641276

    $32320.638

  • 1000

    $63.3738

    $63373.8

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1895 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 115 nC @ 20 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 10mA
Supplier Device Package SOT-227B
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) -
Series -
Package / Case SOT-227-4, miniBLOC
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Mfr IXYS
Vgs (Max) +20V, -5V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number IXFN50