IXFN62N80Q3
detaildesc

IXFN62N80Q3

IXYS

Product No:

IXFN62N80Q3

Manufacturer:

IXYS

Package:

SOT-227B

Datasheet:

pdf

Description:

MOSFET N-CH 800V 49A SOT227B

Quantity:

Delivery:

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Payment:

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In Stock : 5

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $68.39595

    $68.39595

  • 10

    $61.556355

    $615.56355

  • 50

    $54.71676

    $2735.838

  • 100

    $47.877165

    $4787.7165

  • 500

    $46.509246

    $23254.623

  • 1000

    $45.5973

    $45597.3

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 140mOhm @ 31A, 10V
Product Status Active
Vgs(th) (Max) @ Id 6.5V @ 8mA
Supplier Device Package SOT-227B
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 960W (Tc)
Series HiPerFET™, Q3 Class
Package / Case SOT-227-4, miniBLOC
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Mfr IXYS
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXFN62