NTH4L020N090SC1

onsemi

Product No:

NTH4L020N090SC1

Manufacturer:

Package:

TO-247-4L

Datasheet:

Description:

SILICON CARBIDE MOSFET, NCHANNEL

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4415 pF @ 450 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	196 nC @ 15 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 15V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 20mA
Supplier Device Package	TO-247-4L
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	484W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	116A (Tc)
Mfr	onsemi
Vgs (Max)	+22V, -8V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube
Base Product Number	NTH4L02