NTMFS3D2N10MDT1G

onsemi

Product No:

NTMFS3D2N10MDT1G

Manufacturer:

Package:

5-DFN (5x6) (8-SOFL)

Datasheet:

Description:

PTNG 100V LOW Q3.2MOHM N-FET, HE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	71.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.5mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 316µA
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2.8W (Ta), 155W (Tc)
Series	-
Package / Case	8-PowerTDFN, 5 Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 142A (Tc)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)