NTMTSC4D2N10GTXG

onsemi

Product No:

NTMTSC4D2N10GTXG

Manufacturer:

Package:

8-TDFNW (8.3x8.4)

Datasheet:

Description:

100V MVSOA IN DFNW8(PQFN8X8) PAC

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	10450 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	159 nC @ 10 V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	4.2mOhm @ 88A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 450µA
Supplier Device Package	8-TDFNW (8.3x8.4)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.9W (Ta), 267W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 178A (Tc)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)