NVBG080N120SC1
detaildesc

NVBG080N120SC1

onsemi

Product No:

NVBG080N120SC1

Manufacturer:

onsemi

Package:

D2PAK-7

Datasheet:

pdf

Description:

SICFET N-CH 1200V 30A D2PAK-7

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 423

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $13.735575

    $13.735575

  • 10

    $12.362018

    $123.62018

  • 50

    $10.98846

    $549.423

  • 100

    $9.614903

    $961.4903

  • 500

    $9.340191

    $4670.0955

  • 1000

    $9.15705

    $9157.05

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1154 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 5mA
Supplier Device Package D2PAK-7
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 179W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr onsemi
Vgs (Max) +25V, -15V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tape & Reel (TR)
Base Product Number NVBG080