onsemi
Product No:
NVH4L015N065SC1
Manufacturer:
Package:
TO-247-4L
Description:
SIC MOS TO247-4L 650V
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$38.80485
$38.80485
10
$34.924365
$349.24365
50
$31.04388
$1552.194
100
$27.163395
$2716.3395
500
$26.387298
$13193.649
1000
$25.8699
$25869.9
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 4790 pF @ 325 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 283 nC @ 18 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 18mOhm @ 75A, 18V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.3V @ 25mA |
Supplier Device Package | TO-247-4L |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 500W (Tc) |
Series | Automotive, AEC-Q101 |
Package / Case | TO-247-4 |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 142A (Tc) |
Mfr | onsemi |
Vgs (Max) | +22V, -8V |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Package | Tray |