NVH4L018N075SC1
detaildesc

NVH4L018N075SC1

onsemi

Product No:

NVH4L018N075SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Datasheet:

pdf

Description:

SIC MOS TO247-4L 750V

Quantity:

Delivery:

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Payment:

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In Stock : 2

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $40.964175

    $40.964175

  • 10

    $36.867758

    $368.67758

  • 50

    $32.77134

    $1638.567

  • 100

    $28.674923

    $2867.4923

  • 500

    $27.855639

    $13927.8195

  • 1000

    $27.30945

    $27309.45

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5010 pF @ 375 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 262 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 18mOhm @ 66A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 22mA
Supplier Device Package TO-247-4L
Drain to Source Voltage (Vdss) 750 V
Power Dissipation (Max) 500W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 140A (Tc)
Mfr onsemi
Vgs (Max) +22V, -8V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tube