NVH4L040N120SC1
detaildesc

NVH4L040N120SC1

onsemi

Product No:

NVH4L040N120SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Datasheet:

pdf

Description:

SICFET N-CH 1200V 58A TO247-4

Quantity:

Delivery:

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Payment:

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In Stock : 137

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $25.480822

    $25.480822

  • 10

    $22.93274

    $229.3274

  • 50

    $20.384658

    $1019.2329

  • 100

    $17.836576

    $1783.6576

  • 500

    $17.326959

    $8663.4795

  • 1000

    $16.987215

    $16987.215

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1762 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 10mA
Supplier Device Package TO-247-4L
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 319W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Mfr onsemi
Vgs (Max) +25V, -15V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number NVH4L040