
onsemi
Product No:
NVH4L060N065SC1
Manufacturer:
Package:
TO-247-4L
Description:
SIC MOS TO247-4L 650V
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$13.356158
$13.356158
10
$12.020542
$120.20542
50
$10.684926
$534.2463
100
$9.34931
$934.931
500
$9.082187
$4541.0935
1000
$8.904105
$8904.105
Not the price you want? Send RFQ Now and we'll contact you ASAP.
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1473 pF @ 325 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 18 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 20A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.3V @ 6.5mA |
| Supplier Device Package | TO-247-4L |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 176W (Tc) |
| Series | Automotive, AEC-Q101 |
| Package / Case | TO-247-4 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Mfr | onsemi |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Package | Tube |
| Base Product Number | NVH4L060 |