onsemi
Product No:
NVH4L075N065SC1
Manufacturer:
Package:
TO-247-4L
Description:
SIC MOS TO247-4L 650V
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$13.183065
$13.183065
10
$11.864759
$118.64759
50
$10.546452
$527.3226
100
$9.228146
$922.8146
500
$8.964484
$4482.242
1000
$8.78871
$8788.71
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 1196 pF @ 325 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 85mOhm @ 15A, 18V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.3V @ 5mA |
Supplier Device Package | TO-247-4L |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 148W (Tc) |
Series | Automotive, AEC-Q101 |
Package / Case | TO-247-4 |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
Mfr | onsemi |
Vgs (Max) | +22V, -8V |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Package | Tube |