PJQ4435EP-AU_R2_002A1

Panjit International Inc.

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DFN3333-8

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Description:

30V P-CHANNEL ENHANCEMENT MODE M

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1610 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12.5mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	DFN3333-8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Ta), 41W (Tc)
Series	Automotive, AEC-Q101
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.2A (Ta), 45A (Tc)
Mfr	Panjit International Inc.
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)