PMXB360ENEAZ
detaildesc

PMXB360ENEAZ

Nexperia USA Inc.

Product No:

PMXB360ENEAZ

Manufacturer:

Nexperia USA Inc.

Package:

DFN1010D-3

Datasheet:

pdf

Description:

MOSFET N-CH 80V 1.1A DFN1010D-3

Quantity:

Delivery:

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Payment:

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In Stock : 3340

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.153543

    $0.153543

  • 10

    $0.13435

    $1.3435

  • 50

    $0.115157

    $5.75785

  • 100

    $0.105561

    $10.5561

  • 500

    $0.100763

    $50.3815

  • 1000

    $0.095964

    $95.964

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 450mOhm @ 1.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.7V @ 250µA
Supplier Device Package DFN1010D-3
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 400mW (Ta), 6.25W (Tc)
Series Automotive, AEC-Q100
Package / Case 3-XDFN Exposed Pad
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Mfr Nexperia USA Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PMXB360