PSMN102-200Y,115
detaildesc

PSMN102-200Y,115

Nexperia USA Inc.

Product No:

PSMN102-200Y,115

Manufacturer:

Nexperia USA Inc.

Package:

LFPAK56, Power-SO8

Datasheet:

pdf

Description:

MOSFET N-CH 200V 21.5A LFPAK56

Quantity:

Delivery:

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Payment:

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In Stock : 15000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.6

    $0.6

  • 10

    $0.525

    $5.25

  • 50

    $0.45

    $22.5

  • 100

    $0.4125

    $41.25

  • 500

    $0.39375

    $196.875

  • 1000

    $0.375

    $375

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1568 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30.7 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 102mOhm @ 12A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package LFPAK56, Power-SO8
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 113W (Tc)
Series TrenchMOS™
Package / Case SC-100, SOT-669
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21.5A (Tc)
Mfr Nexperia USA Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number PSMN102