R6022YNZ4C13

Rohm Semiconductor

Product No:

R6022YNZ4C13

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Package:

TO-247G

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Description:

NCH 600V 22A, TO-247, POWER MOSF

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	165mOhm @ 6.5A, 12V
Product Status	Active
Vgs(th) (Max) @ Id	6V @ 1.8mA
Supplier Device Package	TO-247G
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	205W (Tc)
Series	-
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V, 12V
Package	Tube
Base Product Number	R6022