R6070JNZ4C13

Rohm Semiconductor

Product No:

R6070JNZ4C13

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Package:

TO-247G

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Description:

600V 70A TO-247, PRESTOMOS WITH

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	165 nC @ 15 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	58mOhm @ 35A, 15V
Product Status	Active
Vgs(th) (Max) @ Id	7V @ 3mA
Supplier Device Package	TO-247G
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	770W (Tc)
Series	-
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube
Base Product Number	R6070