R6515KNX3C16

Rohm Semiconductor

Product No:

R6515KNX3C16

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Package:

TO-220AB

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Description:

650V 15A, TO-220AB, HIGH-SPEED S

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1050 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	315mOhm @ 6.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 430µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	161W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	R6515