RD3P02BATTL1
detaildesc

RD3P02BATTL1

Rohm Semiconductor

Product No:

RD3P02BATTL1

Manufacturer:

Rohm Semiconductor

Package:

TO-252

Datasheet:

pdf

Description:

PCH -100V -20A POWER MOSFET: RD3

Quantity:

Delivery:

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In Stock : 750

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.903578

    $0.903578

  • 10

    $0.81322

    $8.1322

  • 50

    $0.722862

    $36.1431

  • 100

    $0.632504

    $63.2504

  • 500

    $0.614433

    $307.2165

  • 1000

    $0.602385

    $602.385

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 50 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 116mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 56W (Ta)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number RD3P02