RF4P060BGTCR

Rohm Semiconductor

Product No:

RF4P060BGTCR

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Package:

DFN2020-8S

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Description:

NCH 100V 6A, HUML2020L8, POWER M

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	305 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	53mOhm @ 6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	DFN2020-8S
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2W (Ta)
Series	-
Package / Case	8-PowerUDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RF4P060