RJ1P04BBHTL1
detaildesc

RJ1P04BBHTL1

Rohm Semiconductor

Product No:

RJ1P04BBHTL1

Manufacturer:

Rohm Semiconductor

Package:

TO-263AB

Datasheet:

-

Description:

NCH 100V 80A, TO-263AB, POWER MO

Quantity:

Delivery:

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Payment:

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In Stock : 697

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.37699

    $2.37699

  • 10

    $2.139291

    $21.39291

  • 50

    $1.901592

    $95.0796

  • 100

    $1.663893

    $166.3893

  • 500

    $1.616353

    $808.1765

  • 1000

    $1.58466

    $1584.66

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.8mOhm @ 40A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-263AB
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 89W (Ta)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Ta), 40A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)