Rohm Semiconductor
Product No:
RJ1P04BBHTL1
Manufacturer:
Package:
TO-263AB
Datasheet:
-
Description:
NCH 100V 80A, TO-263AB, POWER MO
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Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.37699
$2.37699
10
$2.139291
$21.39291
50
$1.901592
$95.0796
100
$1.663893
$166.3893
500
$1.616353
$808.1765
1000
$1.58466
$1584.66
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Operating Temperature | 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 50 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 8.8mOhm @ 40A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Supplier Device Package | TO-263AB |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation (Max) | 89W (Ta) |
Series | - |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 80A (Ta), 40A (Tc) |
Mfr | Rohm Semiconductor |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Package | Tape & Reel (TR) |