RN1708JE(TE85L,F)
Toshiba Semiconductor and Storage
Product No:
RN1708JE(TE85L,F)
Manufacturer:
Package:
ESV
Datasheet:
-
Description:
NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Quantity:
Delivery:
Payment:
In Stock : 64
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.0756
$0.0756
10
$0.06615
$0.6615
50
$0.0567
$2.835
100
$0.051975
$5.1975
500
$0.049613
$24.8065
1000
$0.04725
$47.25
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Product Information
Parameter Info
User Guide
| Frequency - Transition | 250MHz |
| Current - Collector (Ic) (Max) | 100mA |
| Resistor - Base (R1) | 22kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Mounting Type | Surface Mount |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Product Status | Active |
| Supplier Device Package | ESV |
| Series | - |
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Package / Case | SOT-553 |
| Power - Max | 100mW |
| Resistor - Emitter Base (R2) | 47kOhms |
| Mfr | Toshiba Semiconductor and Storage |
| Current - Collector Cutoff (Max) | 500nA |
| Package | Tape & Reel (TR) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Base Product Number | RN1708 |
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