RN1965FE(TE85L,F)
Toshiba Semiconductor and Storage
Product No:
RN1965FE(TE85L,F)
Manufacturer:
Package:
ES6
Datasheet:
Description:
TRANS 2PNP PREBIAS 0.1W ES6
Quantity:
Delivery:
Payment:
In Stock : 12
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.18648
$0.18648
10
$0.16317
$1.6317
50
$0.13986
$6.993
100
$0.128205
$12.8205
500
$0.122378
$61.189
1000
$0.11655
$116.55
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Product Information
Parameter Info
User Guide
| Frequency - Transition | 250MHz |
| Current - Collector (Ic) (Max) | 100mA |
| Resistor - Base (R1) | 2.2kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Mounting Type | Surface Mount |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Product Status | Obsolete |
| Supplier Device Package | ES6 |
| Series | - |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Package / Case | SOT-563, SOT-666 |
| Power - Max | 100mW |
| Resistor - Emitter Base (R2) | 47kOhms |
| Mfr | Toshiba Semiconductor and Storage |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Package | Tape & Reel (TR) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Base Product Number | RN1965 |
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