RQ3E080GNTB
detaildesc

RQ3E080GNTB

Rohm Semiconductor

Product No:

RQ3E080GNTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Datasheet:

pdf

Description:

MOSFET N-CH 30V 8A 8HSMT

Quantity:

Delivery:

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Payment:

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In Stock : 1497

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.182616

    $0.182616

  • 10

    $0.159789

    $1.59789

  • 50

    $0.136962

    $6.8481

  • 100

    $0.125549

    $12.5549

  • 500

    $0.119842

    $59.921

  • 1000

    $0.114135

    $114.135

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 16.7mOhm @ 8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-HSMT (3.2x3)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2W (Ta), 15W (Tc)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RQ3E080