RQ3E100BNTB1
Rohm Semiconductor
Product No:
RQ3E100BNTB1
Manufacturer:
Package:
8-HSMT (3.2x3)
Datasheet:
-
Description:
NCH 30V 21A POWER MOSFET: RQ3E10
Quantity:
Delivery:
Payment:
In Stock : 2167
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.646968
$0.646968
10
$0.566097
$5.66097
50
$0.485226
$24.2613
100
$0.44479
$44.479
500
$0.424573
$212.2865
1000
$0.404355
$404.355
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Product Information
Parameter Info
User Guide
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 10A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 2W (Ta), 15W (Tc) |
| Series | - |
| Package / Case | 8-PowerVDFN |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 21A (Tc) |
| Mfr | Rohm Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | RQ3E100 |
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