RQ3E180BNTB1
detaildesc

RQ3E180BNTB1

Rohm Semiconductor

Product No:

RQ3E180BNTB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Datasheet:

-

Description:

NCH 30V 39A MIDDLE POWER MOSFET:

Quantity:

Delivery:

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Payment:

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In Stock : 2224

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.114628

    $1.114628

  • 10

    $1.003165

    $10.03165

  • 50

    $0.891702

    $44.5851

  • 100

    $0.780239

    $78.0239

  • 500

    $0.757947

    $378.9735

  • 1000

    $0.743085

    $743.085

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.9mOhm @ 18A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-HSMT (3.2x3)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2W (Ta), 20W (Tc)
Series -
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 39A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RQ3E180