RS1E350GNTB
detaildesc

RS1E350GNTB

Rohm Semiconductor

Product No:

RS1E350GNTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSOP

Datasheet:

pdf

Description:

MOSFET N-CH 30V 35A/80A 8HSOP

Quantity:

Delivery:

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In Stock : 1296

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.70289

    $1.70289

  • 10

    $1.532601

    $15.32601

  • 50

    $1.362312

    $68.1156

  • 100

    $1.192023

    $119.2023

  • 500

    $1.157965

    $578.9825

  • 1000

    $1.13526

    $1135.26

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4060 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.7mOhm @ 35A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-HSOP
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3W (Ta)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 80A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RS1E