RS6L120BGTB1
detaildesc

RS6L120BGTB1

Rohm Semiconductor

Product No:

RS6L120BGTB1

Manufacturer:

Rohm Semiconductor

Package:

8-HSOP

Datasheet:

pdf

Description:

NCH 60V 150A, HSOP8, POWER MOSFE

Quantity:

Delivery:

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In Stock : 1501

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.546775

    $2.546775

  • 10

    $2.292098

    $22.92098

  • 50

    $2.03742

    $101.871

  • 100

    $1.782742

    $178.2742

  • 500

    $1.731807

    $865.9035

  • 1000

    $1.69785

    $1697.85

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3520 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.7mOhm @ 90A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-HSOP
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 104W (Tj)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)