RX3G18BBGC16

Rohm Semiconductor

Product No:

RX3G18BBGC16

Manufacturer:

Package:

TO-220AB

Datasheet:

Description:

NCH 40V 270A, TO-220AB, POWER MO

Quantity:

Delivery:

Payment:

In Stock : 802

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	13200 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.47mOhm @ 90A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	192W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	270A (Ta), 180A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	RX3G18