S2M0025120K
SMC Diode Solutions
Product No:
S2M0025120K
Manufacturer:
Package:
TO-247-4
Datasheet:
Description:
MOSFET SILICON CARBIDE SIC 1200V
Quantity:
Delivery:
Payment:
In Stock : 136
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$46.49967
$46.49967
10
$41.849703
$418.49703
50
$37.199736
$1859.9868
100
$32.549769
$3254.9769
500
$31.619776
$15809.888
1000
$30.99978
$30999.78
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4402 pF @ 1000 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Supplier Device Package | TO-247-4 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 446W (Tc) |
| Series | - |
| Package / Case | TO-247-4 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Mfr | SMC Diode Solutions |
| Vgs (Max) | +25V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Package | Tube |
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