S2M0080120K

SMC Diode Solutions

Product No:

S2M0080120K

Manufacturer:

Package:

TO-247-4

Datasheet:

Description:

MOSFET SILICON CARBIDE SIC 1200V

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1324 pF @ 1000 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 10mA
Supplier Device Package	TO-247-4
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	231W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	41A (Tc)
Mfr	SMC Diode Solutions
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube