STMicroelectronics
Product No:
SCT040H65G3AG
Manufacturer:
Package:
H2PAK-7
Description:
AUTOMOTIVE-GRADE SILICON CARBIDE
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$11.714063
$11.714063
10
$10.542656
$105.42656
50
$9.37125
$468.5625
100
$8.199844
$819.9844
500
$7.965563
$3982.7815
1000
$7.809375
$7809.375
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 39.5 nC @ 18 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 55mOhm @ 20A, 18V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.2V @ 1mA |
Supplier Device Package | H2PAK-7 |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 221W (Tc) |
Series | Automotive, AEC-Q101 |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Mfr | STMicroelectronics |
Vgs (Max) | +18V, -5V |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Package | Tape & Reel (TR) |
Base Product Number | SCT040 |