SCT040HU65G3AG
detaildesc

SCT040HU65G3AG

STMicroelectronics

Product No:

SCT040HU65G3AG

Manufacturer:

STMicroelectronics

Package:

HU3PAK

Datasheet:

pdf

Description:

AUTOMOTIVE-GRADE SILICON CARBIDE

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 481

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $14.765625

    $14.765625

  • 10

    $13.289062

    $132.89062

  • 50

    $11.8125

    $590.625

  • 100

    $10.335938

    $1033.5938

  • 500

    $10.040625

    $5020.3125

  • 1000

    $9.84375

    $9843.75

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 39.5 nC @ 18 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 55mOhm @ 20A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4.2V @ 1mA
Supplier Device Package HU3PAK
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 221W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr STMicroelectronics
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tape & Reel (TR)
Base Product Number SCT040