SCT1000N170
detaildesc

SCT1000N170

STMicroelectronics

Product No:

SCT1000N170

Manufacturer:

STMicroelectronics

Package:

HiP247™

Datasheet:

pdf

Description:

HIP247 IN LINE

Quantity:

Delivery:

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Payment:

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In Stock : 172

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $6.201563

    $6.201563

  • 10

    $5.581406

    $55.81406

  • 50

    $4.96125

    $248.0625

  • 100

    $4.341094

    $434.1094

  • 500

    $4.217062

    $2108.531

  • 1000

    $4.134375

    $4134.375

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 133 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 13.3 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.3Ohm @ 3A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1mA
Supplier Device Package HiP247™
Drain to Source Voltage (Vdss) 1700 V
Power Dissipation (Max) 96W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Mfr STMicroelectronics
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number SCT1000