SCT10N120
detaildesc

SCT10N120

STMicroelectronics

Product No:

SCT10N120

Manufacturer:

STMicroelectronics

Package:

HiP247™

Datasheet:

pdf

Description:

SICFET N-CH 1200V 12A HIP247

Quantity:

Delivery:

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Payment:

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In Stock : 338

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $6.3

    $6.3

  • 10

    $5.67

    $56.7

  • 50

    $5.04

    $252

  • 100

    $4.41

    $441

  • 500

    $4.284

    $2142

  • 1000

    $4.2

    $4200

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package HiP247™
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 150W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Mfr STMicroelectronics
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number SCT10