STMicroelectronics
Product No:
SCT10N120
Manufacturer:
Package:
HiP247™
Description:
SICFET N-CH 1200V 12A HIP247
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$6.3
$6.3
10
$5.67
$56.7
50
$5.04
$252
100
$4.41
$441
500
$4.284
$2142
1000
$4.2
$4200
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Operating Temperature | -55°C ~ 200°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 20 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 690mOhm @ 6A, 20V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Supplier Device Package | HiP247™ |
Drain to Source Voltage (Vdss) | 1200 V |
Power Dissipation (Max) | 150W (Tc) |
Series | - |
Package / Case | TO-247-3 |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Mfr | STMicroelectronics |
Vgs (Max) | +25V, -10V |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Package | Tube |
Base Product Number | SCT10 |