SCT20N120H
detaildesc

SCT20N120H

STMicroelectronics

Product No:

SCT20N120H

Manufacturer:

STMicroelectronics

Package:

H2Pak-2

Datasheet:

pdf

Description:

SICFET N-CH 1200V 20A H2PAK-2

Quantity:

Delivery:

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Payment:

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In Stock : 504

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $15.75882

    $15.75882

  • 10

    $14.182938

    $141.82938

  • 50

    $12.607056

    $630.3528

  • 100

    $11.031174

    $1103.1174

  • 500

    $10.715998

    $5357.999

  • 1000

    $10.50588

    $10505.88

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1mA
Supplier Device Package H2Pak-2
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 175W (Tc)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Mfr STMicroelectronics
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tape & Reel (TR)
Base Product Number SCT20