SCT2160KEHRC11

Rohm Semiconductor

Product No:

SCT2160KEHRC11

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Package:

TO-247N

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Description:

1200V, 22A, THD, SILICON-CARBIDE

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Operating Temperature	175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	208mOhm @ 7A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 2.5mA
Supplier Device Package	TO-247N
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	165W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	+22V, -6V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT2160