SCT2280KEGC11
Rohm Semiconductor
Product No:
SCT2280KEGC11
Manufacturer:
Package:
TO-247N
Datasheet:
-
Description:
1200V, 14A, THD, SILICON-CARBIDE
Quantity:
Delivery:
Payment:
In Stock : 1202
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$11.655
$11.655
10
$10.4895
$104.895
50
$9.324
$466.2
100
$8.1585
$815.85
500
$7.9254
$3962.7
1000
$7.77
$7770
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Product Information
Parameter Info
User Guide
| Operating Temperature | 175°C |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 667 pF @ 800 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 18 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 364mOhm @ 4A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1.4mA |
| Supplier Device Package | TO-247N |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 108W (Tc) |
| Series | - |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Mfr | Rohm Semiconductor |
| Vgs (Max) | +22V, -6V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tube |
| Base Product Number | SCT2280 |
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