SCT2280KEHRC11
detaildesc

SCT2280KEHRC11

Rohm Semiconductor

Product No:

SCT2280KEHRC11

Manufacturer:

Rohm Semiconductor

Package:

TO-247N

Datasheet:

pdf

Description:

1200V, 14A, THD, SILICON-CARBIDE

Quantity:

Delivery:

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In Stock : 334

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $13.40325

    $13.40325

  • 10

    $12.062925

    $120.62925

  • 50

    $10.7226

    $536.13

  • 100

    $9.382275

    $938.2275

  • 500

    $9.11421

    $4557.105

  • 1000

    $8.9355

    $8935.5

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 667 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 400 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 364mOhm @ 4A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1.4mA
Supplier Device Package TO-247N
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 108W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) +22V, -6V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube
Base Product Number SCT2280