Rohm Semiconductor
Product No:
SCT2280KEHRC11
Manufacturer:
Package:
TO-247N
Description:
1200V, 14A, THD, SILICON-CARBIDE
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$13.40325
$13.40325
10
$12.062925
$120.62925
50
$10.7226
$536.13
100
$9.382275
$938.2275
500
$9.11421
$4557.105
1000
$8.9355
$8935.5
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Operating Temperature | 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 667 pF @ 800 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 400 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 364mOhm @ 4A, 18V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 1.4mA |
Supplier Device Package | TO-247N |
Drain to Source Voltage (Vdss) | 1200 V |
Power Dissipation (Max) | 108W (Tc) |
Series | Automotive, AEC-Q101 |
Package / Case | TO-247-3 |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
Mfr | Rohm Semiconductor |
Vgs (Max) | +22V, -6V |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Package | Tube |
Base Product Number | SCT2280 |