SCT2450KEHRC11
detaildesc

SCT2450KEHRC11

Rohm Semiconductor

Product No:

SCT2450KEHRC11

Manufacturer:

Rohm Semiconductor

Package:

TO-247N

Datasheet:

pdf

Description:

1200V, 10A, THD, SILICON-CARBIDE

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 307

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $11.262825

    $11.262825

  • 10

    $10.136542

    $101.36542

  • 50

    $9.01026

    $450.513

  • 100

    $7.883978

    $788.3978

  • 500

    $7.658721

    $3829.3605

  • 1000

    $7.50855

    $7508.55

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 463 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 585mOhm @ 3A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 900µA
Supplier Device Package TO-247N
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 85W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) +22V, -6V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube
Base Product Number SCT2450