Rohm Semiconductor
Product No:
SCT2450KEHRC11
Manufacturer:
Package:
TO-247N
Description:
1200V, 10A, THD, SILICON-CARBIDE
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$11.262825
$11.262825
10
$10.136542
$101.36542
50
$9.01026
$450.513
100
$7.883978
$788.3978
500
$7.658721
$3829.3605
1000
$7.50855
$7508.55
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Operating Temperature | 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 463 pF @ 800 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 18 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 585mOhm @ 3A, 18V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 900µA |
Supplier Device Package | TO-247N |
Drain to Source Voltage (Vdss) | 1200 V |
Power Dissipation (Max) | 85W (Tc) |
Series | Automotive, AEC-Q101 |
Package / Case | TO-247-3 |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Mfr | Rohm Semiconductor |
Vgs (Max) | +22V, -6V |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Package | Tube |
Base Product Number | SCT2450 |