SCTH35N65G2V-7
detaildesc

SCTH35N65G2V-7

STMicroelectronics

Product No:

SCTH35N65G2V-7

Manufacturer:

STMicroelectronics

Package:

H2PAK-7

Datasheet:

pdf

Description:

SICFET N-CH 650V 45A H2PAK-7

Quantity:

Delivery:

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In Stock : 1287

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $11.41875

    $11.41875

  • 10

    $10.276875

    $102.76875

  • 50

    $9.135

    $456.75

  • 100

    $7.993125

    $799.3125

  • 500

    $7.76475

    $3882.375

  • 1000

    $7.6125

    $7612.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.2V @ 1mA
Supplier Device Package H2PAK-7
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 208W (Tc)
Series -
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Mfr STMicroelectronics
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Package Tape & Reel (TR)
Base Product Number SCTH35