SCTH90N65G2V-7
detaildesc

SCTH90N65G2V-7

STMicroelectronics

Product No:

SCTH90N65G2V-7

Manufacturer:

STMicroelectronics

Package:

H2PAK-7

Datasheet:

pdf

Description:

SICFET N-CH 650V 90A H2PAK-7

Quantity:

Delivery:

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In Stock : 307

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $31.88997

    $31.88997

  • 10

    $28.700973

    $287.00973

  • 50

    $25.511976

    $1275.5988

  • 100

    $22.322979

    $2232.2979

  • 500

    $21.68518

    $10842.59

  • 1000

    $21.25998

    $21259.98

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 26mOhm @ 50A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 1mA
Supplier Device Package H2PAK-7
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 330W (Tc)
Series -
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Mfr STMicroelectronics
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tape & Reel (TR)
Base Product Number SCTH90