SCTW40N120G2V
STMicroelectronics
Product No:
SCTW40N120G2V
Manufacturer:
Package:
HiP247™
Datasheet:
Description:
SILICON CARBIDE POWER MOSFET 120
Quantity:
Delivery:
Payment:
In Stock : 275
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$15.257497
$15.257497
10
$13.731748
$137.31748
50
$12.205998
$610.2999
100
$10.680248
$1068.0248
500
$10.375098
$5187.549
1000
$10.171665
$10171.665
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 200°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF @ 800 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA |
| Supplier Device Package | HiP247™ |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 278W (Tc) |
| Series | - |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Mfr | STMicroelectronics |
| Vgs (Max) | +22V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tube |
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