SCTW40N120G2VAG
detaildesc

SCTW40N120G2VAG

STMicroelectronics

Product No:

SCTW40N120G2VAG

Manufacturer:

STMicroelectronics

Package:

HiP247™

Datasheet:

pdf

Description:

SICFET N-CH 1200V 33A HIP247

Quantity:

Delivery:

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Payment:

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In Stock : 280

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $17.503763

    $17.503763

  • 10

    $15.753386

    $157.53386

  • 50

    $14.00301

    $700.1505

  • 100

    $12.252634

    $1225.2634

  • 500

    $11.902558

    $5951.279

  • 1000

    $11.669175

    $11669.175

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 105mOhm @ 20A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 1mA
Supplier Device Package HiP247™
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 290W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Mfr STMicroelectronics
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube
Base Product Number SCTW40