STMicroelectronics
Product No:
SCTW40N120G2VAG
Manufacturer:
Package:
HiP247™
Description:
SICFET N-CH 1200V 33A HIP247
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$17.503763
$17.503763
10
$15.753386
$157.53386
50
$14.00301
$700.1505
100
$12.252634
$1225.2634
500
$11.902558
$5951.279
1000
$11.669175
$11669.175
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Operating Temperature | -55°C ~ 200°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 800 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 18V |
Product Status | Active |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Supplier Device Package | HiP247™ |
Drain to Source Voltage (Vdss) | 1200 V |
Power Dissipation (Max) | 290W (Tc) |
Series | Automotive, AEC-Q101 |
Package / Case | TO-247-3 |
Technology | SiCFET (Silicon Carbide) |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
Mfr | STMicroelectronics |
Vgs (Max) | +22V, -10V |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Package | Tube |
Base Product Number | SCTW40 |