SCTWA10N120
detaildesc

SCTWA10N120

STMicroelectronics

Product No:

SCTWA10N120

Manufacturer:

STMicroelectronics

Package:

HiP247™ Long Leads

Datasheet:

pdf

Description:

IC POWER MOSFET 1200V HIP247

Quantity:

Delivery:

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Payment:

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In Stock : 325

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $18.3015

    $18.3015

  • 10

    $16.47135

    $164.7135

  • 50

    $14.6412

    $732.06

  • 100

    $12.81105

    $1281.105

  • 500

    $12.44502

    $6222.51

  • 1000

    $12.201

    $12201

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 20V
Product Status Obsolete
Vgs(th) (Max) @ Id 3.5V @ 250µA (Typ)
Supplier Device Package HiP247™ Long Leads
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 110W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Mfr STMicroelectronics
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number SCTWA10