SI1013X-T1-GE3

Vishay Siliconix

Product No:

SI1013X-T1-GE3

Manufacturer:

Package:

SC-89-3

Datasheet:

Description:

MOSFET P-CH 20V 350MA SC89-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.5 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.2Ohm @ 350mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
Supplier Device Package	SC-89-3
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	250mW (Ta)
Series	TrenchFET®
Package / Case	SC-89, SOT-490
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	350mA (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±6V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI1013