SI1062X-T1-GE3

Vishay Siliconix

Product No:

SI1062X-T1-GE3

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Package:

SC-89-3

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Description:

MOSFET N-CH 20V SC89-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	43 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.7 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	420mOhm @ 500mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	SC-89-3
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	220mW (Ta)
Series	TrenchFET®
Package / Case	SC-89, SOT-490
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	530mA (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI1062